BC212B Fairchild Semiconductor, BC212B Datasheet

TRANSISTOR PNP 50V 100MA TO-92

BC212B

Manufacturer Part Number
BC212B
Description
TRANSISTOR PNP 50V 100MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BC212B

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 2mA, 5V
Power - Max
350mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-

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©2002 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
• Sourced from process 68.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
On Characteristics*
h
V
V
V
Small Signal Characteristics
C
h
NF
C
Symbol
CBO
EBO
collector currents to 100mA.
FE
fe
J,
CEO
CBO
EBO
CE
BE
BE
ob
CBO
EBO
CEO
T
Symbol
(sat)
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Small Signal Current Gain
Noise Figure
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
C
=25°C unless otherwise noted
Parameter
T
- Continuous
C
=25°C unless otherwise noted
BC212B
I
V
I
I
V
V
V
I
I
V
V
V
V
R
C
C
E
C
C
CB
EB
CE
CE
CE
CE
CE
CE
G
= 10µA
= 2mA
= 10µA
= 100mA, I
= 100mA, I
= 2KΩ, BW = 200Hz
= 4V
= 30V
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 5V, I
= 5V, I
Test Condition
C
C
C
C
C
= 10µA
= 2mA
= 2mA
= 2mA, f = 1KHz
= 200µA, f = 1KHz
B
B
= 5mA
= 5mA
1. Collector 2. Base 3. Emitter
1
Min.
- 55 ~ 150
200
0.6
50
60
40
60
5
Value
100
50
60
5
Typ.
TO-92
Max.
0.72
400
0.6
1.4
15
10
15
6
Rev. A, October 2002
Units
mA
°C
V
V
V
Units
nA
nA
dB
pF
V
V
V
V
V
V

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BC212B Summary of contents

Page 1

... Small Signal Characteristics C Output Capacitance ob h Small Signal Current Gain fe NF Noise Figure * Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% ©2002 Fairchild Semiconductor Corporation BC212B T =25°C unless otherwise noted C Parameter - Continuous T =25°C unless otherwise noted C Test Condition I ...

Page 2

... Thermal Characteristics Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Case θJC ©2002 Fairchild Semiconductor Corporation T =25°C unless otherwise noted A Parameter Max. Units 350 mW 2.8 mW/°C °C/W 357 °C/W 125 Rev. A, October 2002 ...

Page 3

... Package Dimensions ±0.10 0.46 1.27TYP ±0.20 [1.27 ] ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP ±0.20 [1.27 ] ±0.20 3.60 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, October 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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