TN6707A Fairchild Semiconductor, TN6707A Datasheet
TN6707A
Manufacturer Part Number
TN6707A
Description
TRANS GP NPN 80V TO-226
Manufacturer
Fairchild Semiconductor
Datasheet
1.TN6707A.pdf
(3 pages)
Specifications of TN6707A
Transistor Type
NPN
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 100mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 250mA, 2V
Power - Max
1W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TN6707A
Manufacturer:
FSC
Quantity:
9 500
©2003 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• These devices is designed for general purpose medium power
• Sourced from process 39.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
h
f
P
R
R
C
CBO
EBO
T
Symbol
amplifiers and switches requiring collector currents to 1.0A
Symbol
FE
fe
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE
BE
D
θJC
θJA
, T
Symbol
(sat)
(on)
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Parameter
T
A
T
=25°C unless otherwise noted
Parameter
A
- Continuous
=25°C unless otherwise noted
T
A
=25°C unless otherwise noted
TN6707A
I
I
I
V
V
V
V
V
I
I
V
V
V
C
E
E
C
C
CB
EB
CE
CE
CE
CE
CE
CE
= 100µA, I
= 1.0mA, I
= 10mA, I
= 500mA, I
= 1.0A, I
= 80V, I
= 5.0V, I
= 2.0V, I
= 2.0V, I
= 2.0V, I
= 2.0V, I
= 5.0V, I
= 5.0V, I
Test Conditions
B
B
E
E
C
C
C
C
C
= 100mA
C
C
C
B
= 0
= 0
= 0
= 0
= 0
= 50mA
= 250mA
= 500mA
= 1.0A
= 200mA, f = 20MHz
= 50mA, f = 20MHz
= 50mA
-55 ~ +150
FPN660
100
5.0
1.2
80
C
B E
Max.
125
1.0
8.0
50
Min.
100
5.0
2.5
80
40
40
25
50
TO-226
Max.
250
0.1
0.1
0.5
1.0
1.5
20
Units
°C
mW/°C
V
V
V
A
Rev. A, January 2003
Units
°C/W
°C/W
W
Units
MHz
MHz
µA
µA
V
V
V
V
V
V
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TN6707A Summary of contents
Page 1
... Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2003 Fairchild Semiconductor Corporation TN6707A T =25°C unless otherwise noted A Parameter - Continuous T =25°C unless otherwise noted A Test Conditions I = 10mA ...
Page 2
... Package Dimensions 7.87-7.37; 0.76- 0.36; 15.61-14.47; 0.51-0.36; 2.41-2.13; ©2003 Fairchild Semiconductor Corporation TO-226 4.70-4.32; 1.65-1.27; 0.51 1.40- 1 .14; 1.40-1.14; 4.45-3.81; 5" TYP TO-226AE (95,99) For leadformed option ordering, refer to Tape & Reel data information. 1.52-1.02; 2" TYP 7.73-7.10; 2" TYP 0.48-0.30; ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...