TN3440A Fairchild Semiconductor, TN3440A Datasheet

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TN3440A

Manufacturer Part Number
TN3440A
Description
TRANS GP NPN 250V 100MA TO-226
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of TN3440A

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
500mV @ 4mA, 50mA
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 20mA, 10V
Power - Max
1W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
θJC
θJA
CEO
CBO
EBO
J
This device is designed for use in horizontal driver, class A off-line amplifier
and off-line switching applications. Sourced from Process 36.
Thermal Characteristics
NPN General Purpose Amplifier
Absolute Maximum Ratings*
, T
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
B
Derate above 25 ° C
E
TN3440A
Characteristic
TO-226
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
TN3440A
Max
125
1.0
8.0
50
-55 to +150
Value
250
300
100
7.0
Units
Units
mW/ ° C
° C/W
° C/W
mA
° C
V
V
V
W

Related parts for TN3440A

TN3440A Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient R θJA © 1997 Fairchild Semiconductor Corporation TO-226 TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 250 V 300 V 7.0 V 100 mA ° C -55 to +150 Max Units TN3440A 1.0 W mW/ ° C 8.0 ° C/W 125 ° C/W 50 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* V sus CEO Collector-Base Breakdown Voltage (BR)CBO I Collector-Cutoff Current CEO I Collector-Cutoff Current CEX I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1000 - 40 °C 800 600 25 ° C 125 ° C 400 β 200 100 I - COLLECTOR CURRENT (mA) C Collector-Cutoff Current vs Ambient Temperature ...

Page 4

... TO-226AE Tape and Reel Data ©2000 Fairchild Semiconductor International T PE and REELOPTION See Fig 2.0 for various Reeli n g Styles MMO P CK OPTION See Fig 3.0 for2 mmo Pack Options BULK OPTION See Bulk Packing Information table October 1999, Rev. A1 ...

Page 5

TO-226AE Tape and Reel Data, continued O-226AE Reeling Style Configuration: igure 2.0 Machine Option "A"(H) Style "A" D26Z, D70Z (s/h) O-226AE Radial Ammo Packaging Configuration: igure 3.0 IRST WIRE O ADHESIVE TAPE IS ON THE TOP SIDE LAT O TRANSISTOR ...

Page 6

TO-226AE Tape and Reel Data, continued TO-226AE Tape and Reel T aping Dimension Config uration Use r Direction of Fee d TO-226AE Reel Conf ig ura tion: F63TNR La bel Custom ized ...

Page 7

... TO-226AE Package Dimensions TO-226AE (FS PKG Code 95, 99) 7.87-7.37; 0.76- 0.36; 15.61-14.47; 0.51-0.36; 2.41-2.13; ©2000 Fairchild Semiconductor International Scale 1:1 on letter size paper Part Weight per unit (gram): 0.300 4.70-4.32; 1.65-1.27; 0.51 1.40- 1 .14; 1.40-1.14; 4.45-3.81; 5" TYP For leadformed option ordering, refer to Tape & ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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