FJPF5021RTU Fairchild Semiconductor, FJPF5021RTU Datasheet
首页 Discrete Semiconductor Products Transistors (BJT) - Single FJPF5021RTU
Manufacturer Part Number
FJPF5021RTU
Description
TRANSISTOR NPN 500V 5A TO-220F
Manufacturer
Fairchild Semiconductor
Specifications of FJPF5021RTU
Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
500V
Vce Saturation (max) @ Ib, Ic
1V @ 600mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 600mA, 5V
Power - Max
40W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2003 Fairchild Semiconductor Corporation
High Voltage and High Reliability
• High Speed Switching : t
• Wide SOA
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
f
V
V
V
I
I
I
P
T
T
BV
BV
BV
V
I
I
h
h
V
V
C
t
t
t
FE
T
C
CP
B
CBO
EBO
ON
STG
F
Symbol
FE1
FE2
J
STG
CBO
EBO
C
CEX
CE
BE
Symbol
ob
CEO
CBO
CEO
EBO
(sat)
(sat)
Classification
(sus)
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
F
= 0.1 s(Typ.)
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
15 ~ 30
=25 C unless otherwise noted
R
FJPF5021
I
I
I
I
L = 1mH, Clamped
V
V
V
V
I
I
V
V
V
I
R
C
C
E
C
C
C
C
CB
EB
CE
CE
CB
CE
CC
L
= 1mA, I
= 1mA, I
= 5mA, I
= 2.5A, I
= 3A, I
= 3A, I
= 5I
= 50
= 5V, I
= 500V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, I
= 200V
Test Condition
B1
B
B
= -2.5I
= 0.6A
= 0.6A
E
B
C
B1
C
C
C
E
C
= 0
= 0
= 0
= 0
= 0.6A
= 3A
E
= -I
= 0, f = 1MHz
= 0.6A
= 0
B2
B2
20 ~ 40
= 4A
= 1A
O
1
1.Base
Min.
800
500
500
15
8
7
- 55 ~ 150
2.Collector
Value
800
500
150
10
40
5
2
7
TO-220F
Typ.
0.1
15
80
30 ~ 50
Max.
3.Emitter
Y
1.5
0.5
0.3
10
10
50
1
3
Units
Rev. A, May 2003
W
Units
V
V
V
A
A
A
MHz
C
C
pF
V
V
V
V
V
V
A
A
s
s
s
Related parts for FJPF5021RTU
FJPF5021RTU Summary of contents
... Base-Emitter Saturation Voltage BE C Output Capacitance ob f Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2003 Fairchild Semiconductor Corporation FJPF5021 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 5mA ...
... Figure 1. Static Characteristic 10 V (sat 0.1 V (sat) CE 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2003 Fairchild Semiconductor Corporation 100 I = 200mA 100mA 50mA 20mA 0. 0.1 0. 0.1 ...
... Typical Characteristics 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 60 Vcc=50V, I =1A - 1mH 1000 10000 100 125 150 175 C], CASE TEMPERATURE C Figure 8. Power Derating Rev. A, May 2003 ...
... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2003 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, May 2003 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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