MT47H64M16HR-3 IT:H Micron Technology Inc, MT47H64M16HR-3 IT:H Datasheet - Page 124
MT47H64M16HR-3 IT:H
Manufacturer Part Number
MT47H64M16HR-3 IT:H
Description
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H64M16HR-3_ITH.pdf
(134 pages)
Specifications of MT47H64M16HR-3 IT:H
Density
1 Gb
Maximum Clock Rate
667 MHz
Package
84FBGA
Operating Supply Voltage
1.8 V
Maximum Random Access Time
0.45 ns
Operating Temperature
-40 to 85 °C
Organization
64Mx16
Address Bus
16b
Access Time (max)
450ps
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 76: PRECHARGE Command-to-Power-Down Entry
Figure 77: LOAD MODE Command-to-Power-Down Entry
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Notes:
Note:
Command
Command
Address
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers.
2. All banks must be in the precharged state and
3. The earliest precharge power-down entry is at T3, which is after
CK#
CKE
CK#
A10
CKE
CK
PRECHARGE command. Precharge power-down entry occurs prior to
isfied.
CK
Valid
T0
Valid
T0
t RP 2
Valid 1
LM
T1
Single bank
Valid
All banks
124
PRE
T1
vs
1 x
t MRD
t
CK
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T2
Power-down 1
entry
NOP
T2
1Gb: x4, x8, x16 DDR2 SDRAM
t
Power-down 3
RP met prior to issuing LM command.
entry
NOP
T3
t
CKE (MIN)
T3
Power-Down Mode
© 2004 Micron Technology, Inc. All rights reserved.
t CKE (MIN)
Don’t Care
t
MRD is satisfied.
T4
t
RP (MIN) being sat-
Don’t Care
t
CK after the
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