TIP112 Microsemi Commercial Components Group, TIP112 Datasheet

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TIP112

Manufacturer Part Number
TIP112
Description
TRANSISTOR NPN 80V 2AMP TO-220
Manufacturer
Microsemi Commercial Components Group
Datasheet

Specifications of TIP112

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
2.5V @ 8mA, 2A
Current - Collector Cutoff (max)
2mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 1A, 4V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Other names
TIP112MS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP112
Manufacturer:
ST
Quantity:
20 000
Part Number:
TIP112
Manufacturer:
ST
Quantity:
18 000
Part Number:
TIP112
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
TIP112
Quantity:
250
Part Number:
TIP112,TIP115,TIP117,TIP110,TIP107,TIP105,TIP102,
Manufacturer:
ST
0
Part Number:
TIP112/117
Manufacturer:
ST
0
Revision: 5
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Absolute Maximum Ratings @ T
Electrical Characteristics @ 25
Features
Symbol
Micro Commercial Components
VCE(sat)
V
Symbol
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
VCEO
CEO(SUS)
C
V
V
T
I
I
I
V
I
H
P
CBO
CEO
EBO
T
M C C
CBO
EBO
I
CM
I
STG
BE
OB
C
B
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
C
fe
J
The complementary PNP types are the TIP115/116/117 respectively
Marking: Part number
Emitter-base Voltage(Open collector)
Collector Current
Collector Current Pulse
Base Current
Total Device Dissipation(Ta=25℃)
Total Device Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature Range
DC current gain
Collector-emitter Saturation Voltage
Collector-emitter sustaining voltage
( I
Collector-emitter voltage
E
Collector cut-off current
Collector cut-off current
Collector-base voltage
=0 ; V
Emitter cut-off current
Base-emitter Voltage
Parameter
Output capacitance
( I
(V
(V
(V
(V
(V
(I
(I
( I
(V
C
(V
(Open emitter)
( I
C
C
CE
CE
=2A I
CB
(Open base)
CB
CE
Parameter
C
=1A ; V
=2A ; V
CB
C
CB
EB
=2A ; V
=40V; V
=50V; V
=100V; I
=80V; I
=30V; V
=30mA; I
=60V; I
=5V; I
=-10V,f=0.1MHz )
B
O
a
=-0.008A )
C Unless Otherwise Specified
= 25℃(unless otherwise noted)
CE
CE
CE
C
E
EB
EB
=4V)
=4V)
E
EB
=0)
E
www.mccsemi.com
=4V )
=0)
B
=0)
=0)
=0)
=0)
=0)
=0)
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
-65 to +150
1000
100
Min
500
60
80
1
2
Value
0.05
100
100
150
60
80
60
80
50
5
2
4
2
Max
100
2.0
2.5
2.8
1 of 2
Unit
W
W
V
V
V
A
A
A
Units
mA
mA
mA
PF
V
V
V
F
A
K
G
H
J
K
L
N
Q
R
S
T
U
DIM
B
C
D
F
V
A
H
L
TIP110/111/112
G
Power Transistor
.190
.012
.500
.045
.190
.045
.380
.020
.139
.100
.080
.230
.045
.560
.140
-----
1
---
MIN
INCHES
Silicon NPN
N
2
B
Darlington
TO-220AB
3
MAX
.025
.110
.580
.060
.210
.055
.270
.420
.045
.161
.135
.115
.050
.625
.190
.250
-----
V
DIMENSIONS
D
Q
12.70
14.22
PIN 1.
PIN 2.
PIN 3.
2.29
0.30
1.14
4.83
1.14
9.65
0.51
3.53
2.54
2.04
5.84
3.56
1.15
-----
MIN
---
U
MM
T
J
14.73
BASE
COLLECTOR
EMITTER
15.88
10.67
MAX
6.35
2.79
0.64
1.52
5.33
1.39
2008/01/01
1.14
4.09
3.43
2.92
6.86
4.82
1.27
-----
C
NOTE
S
R

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TIP112 Summary of contents

Page 1

... I Collector cut-off current CBO TIP110 (V =60V TIP111 (V =80V TIP112 (V =100V Collector cut-off current CEO TIP110 (V =30V TIP111 (V =40V TIP112 (V =50V Emitter cut-off current I EBO (V =5V current gain = =4V = =4V Output capacitance =-10V,f=0.1MHz ) E CB Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. www.mccsemi.com ...

Page 2

Micro Commercial Components Ordering Information Device (Part Number)-BP Micro Commercial Components Corp product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp use of any product described ...

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