BC337-25,116 NXP Semiconductors, BC337-25,116 Datasheet - Page 8

• Manufacturer Part Number: BC337-25,116
• Description: TRANSISTOR NPN 500MA 45V TO-92
• Manufacturer: NXP Semiconductors

Specifications of BC337-25,116

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933179590116; BC337-25 T/R; BC337-25 T/R

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 7.
Fig 9.
V
CEsat
(V)
10
10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−1
−2
1
10
I
Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
−1
C
C
(1) (2)
(3)
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
10
V
CEsat
(V)
10
10
10
−1
−2
−3
10
1
10
2
−1
I
006aaa137
C
(mA)
Rev. 06 — 17 November 2009
10
1
3
10
(1)
(3)
Fig 8.
V
BC817; BC817W; BC337
(2)
CEsat
(V)
10
10
10
(1) T
(2) T
(3) T
45 V, 500 mA NPN general-purpose transistors
−1
−2
−3
10
1
10
I
Selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
2
−1
C
amb
amb
amb
/I
I
006aaa139
C
B
(mA)
= 10
= 150 °C
= 25 °C
= −55 °C
10
1
3
10
(1)
(3)
(2)
10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa138
C
(mA)
10
3
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