BC857B STMicroelectronics, BC857B Datasheet
BC857B
Specifications of BC857B
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BC857B Summary of contents
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... Collector Peak Current CM P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j June 2002 SMALL SIGNAL PNP TRANSISTOR Marking 3F INTERNAL SCHEMATIC DIAGRAM = BC857B PRELIMINARY DATA SOT-23 Value Unit - -100 mA -200 mA 250 mW o -65 to 150 C o 150 C 1/4 ...
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... BC857B THERMAL DATA R Thermal Resistance Junction-Ambient thj-amb Device mounted on a PCB area ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter ...
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... MAX. MIN. TYP. 1.1 33.4 0.95 25.6 1.4 47.2 3 110.2 1.05 37.4 2.05 74.8 2.5 82.6 0.48 14.9 0.6 11.8 0.1 0 0.65 11.8 0.17 3.5 BC857B MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 0044616/B 3/4 ...
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... BC857B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...