MJD31C STMicroelectronics, MJD31C Datasheet - Page 3

• Manufacturer Part Number: MJD31C
• Description: TRANSISTOR PWR COMPL D-PAK
• Manufacturer: STMicroelectronics

Specifications of MJD31C

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

MJD31C
2
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Electrical characteristic (curves)
Figure 2.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(on)
I
I
I
h
CEO
EBO
CES
FE
= 25 °C unless otherwise specified.
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
Safe operating area
B
C
B
BE
= 0)
= 0)
= 0)
= 0)
Parameter
Doc ID 3543 Rev 4
V
V
V
I
I
I
I
I
C
C
C
C
C
CE
CB
EB
= 30 mA
= 3 A
= 3 A
= 1 A
= 3 A
= 5 V
= 100 V
= 60 V
Test conditions
Figure 3.
_
_
_ _
V
V
V
I
CE
B
CE
CE
= 375 mA
= 4 V
= 4 V
= 4 V
Derating curve
Electrical characteristics
Min.
100
25
10
Typ.
-
-
-
-
-
-
-
Max.
0.1
1.2
1.8
20
50
50
Unit
mA
µA
µA
V
V
V
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