BCP52-16 STMicroelectronics, BCP52-16 Datasheet
BCP52-16
Specifications of BCP52-16
BCP52-16
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BCP52-16 Summary of contents
Page 1
... BM P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j September 2003 LOW POWER PNP TRANSISTOR Marking BCP5216 INTERNAL SCHEMATIC DIAGRAM = < 5 ms) p < amb BCP52- SOT-223 Value Unit -60 V - -1.5 A -0.1 A -0 -65 to 150 C o 150 ...
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... BCP52-16 THERMAL DATA R Thermal Resistance Junction-Ambient thj-amb Device mounted on a PCB area ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Collector-Emitter (BR)CER Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter On ...
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... H 6.70 7. 0.02 mm MAX. MIN. 1.80 0.80 0.024 3.10 0.114 0.32 0.009 6.70 0.248 3.70 0.130 7.30 0.264 o 10 BCP52-16 inch TYP. MAX. 0.071 0.027 0.031 0.118 0.122 0.010 0.013 0.256 0.264 0.090 0.181 0.138 0.146 0.276 0.287 o 10 P008B 3/4 ...
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... BCP52-16 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...