MJE521 ON Semiconductor, MJE521 Datasheet - Page 3

• Manufacturer Part Number: MJE521
• Description: TRANS PWR NPN 4A 40V TO225AA
• Manufacturer: ON Semiconductor

Specifications of MJE521

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 40V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1A, 1V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Other names: MJE521; MJE521OS

3.0
2.0
0.5
0.3
5.0
1.0
0.2
0.1
1000
10
700
500
300
200
100
0.07
0.05
0.03
0.02
0.01
70
50
30
20
10
1.0
0.7
0.5
0.3
0.2
0.1
2.0
0.01
Figure 1. Active−Region Safe Operating Area
2.0
0.01
D = 0.5
3.0 5.0
SINGLE PULSE
V
0.02
0.1
0.05
0.2
CE
T
J
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0
= 150°C
0.03
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
10
Figure 2. DC Current Gain
I
C
T
, COLLECTOR CURRENT (mA)
0.05
J
20
= 150°C
5.0
25°C
−55 °C
30
0.1
50
10
100
0.2
5.0 ms
C
= 25°C
dc
200
0.3
V
300
CE
1.0 ms
0.5
20
= 1.0 V
500 1000
Figure 4. Thermal Response
1.0
30
http://onsemi.com
40
MJE521
2000
2.0
t, TIME (ms)
3
3.0
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
JC
JC
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided (T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
(t) = r(t) q
1.5
1.2
0.9
0.6
0.3
= 5.0°C/W MAX
The data of Figure 1 based on T
There are two limitations on the power handling ability of
− T
0
5.0
2.0
C
= P
JC
3.0 5.0
(pk)
T
10
J
1
= 25°C
q
JC
V
(t)
BE(sat)
10
V
20
CE(sat)
I
C
Figure 3. “On” Voltage
, COLLECTOR CURRENT (mA)
@ I
30
20
@ I
C
/I
30
B
C
= 10
50
/I
B
P
= 10
50
(pk)
V
DUTY CYCLE, D = t
BE
100
t
@ V
100
1
t
2
CE
J(pk)
200
= 2.0 V
200
300
= 150_C; T
300
1
500 1000
/t
2
500
C
− V
2000
1000
C
Jpk
CE
is
)