MPS6521 ON Semiconductor, MPS6521 Datasheet - Page 10

• Manufacturer Part Number: MPS6521
• Description: TRANS NPN SS 25V LN TO92
• Manufacturer: ON Semiconductor

Specifications of MPS6521

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 2mA, 10V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: MPS6521OS

10
10
400
10
10
10
200
100
10
10
4.0
6.0
0.07
0.05
0.03
0.02
0.01
60
20
10
40
−1
−2
1.0
0.7
0.5
0.3
0.2
0.1
4
1
0
3
2
2.0
− 4
0
0.01
V
CC
− 2
0.02
0
= 30 Vdc
V
D = 0.5
0.01
CE
0.05
0.02
0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2
0.1
4.0
0.05
T
T
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
J
J
, JUNCTION TEMPERATURE (°C)
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
= 150°C
0.1
6.0
T
A
Figure 42.
Figure 41.
0.2
= 25°C
8.0 10
SINGLE PULSE
T
C
I
= 25°C
CEO
0.5
MPS6521 (NPN)
I
dc
CEX
1.0 ms
1.0
@ V
dc
100 ms
2.0
BE(off)
10 ms
AND
I
CBO
20
1.0 s
Figure 39. Thermal Response
= 3.0 Vdc
5.0
http://onsemi.com
MPS6523
10
40
PNP
t, TIME (ms)
10
20
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
MPS6523 (PNP)
represented by the model as shown in Figure 40. Using
the model and the device thermal response the
normalized effective transient thermal resistance of
Figure 39 was calculated for various duty cycles.
Figure 39 by the steady state value R
The MPS6523 is dissipating 2.0 watts peak under the
following conditions:
Using Figure 39 at a pulse width of 1.0 ms and D = 0.2,
the reading of r(t) is 0.22.
Application Note AN569/D, available from the
Literature Distribution Center or on our website at
www.onsemi.com.
limits of the transistor that must be observed for
reliable operation. Collector load lines for specific
circuits must fall below the limits indicated by the
applicable curve.
T
curves are valid for duty cycles to 10% provided T
≤ 150°C. T
Figure 39. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
50
C
Example:
The peak rise in junction temperature is therefore
For more information, see ON Semiconductor
To find Z
The data of Figure 42 is based upon T
or T
DT = r(t) x P
A train of periodical power pulses can be
The safe operating area curves indicate I
t
1
100 200
P
A
= 1.0 ms, t
(pk)
is variable depending upon conditions. Pulse
J(pk)
qJA(t)
t
FIGURE 40
1
(pk)
may be calculated from the data in
500 1.0 k 2.0 k
t
, multiply the value obtained from
2
2
= 5.0 ms. (D = 0.2)
x R
qJA
= 0.22 x 2.0 x 200 = 88°C.
DUTY CYCLE, D = t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
Z
T
qJA(t)
J(pk)
5.0 k 10 k 20 k 50 k 100 k
− T
= r(t) w R
A
= P
qJA
(pk)
J(pk)
.
qJA
1
Z
(SEE AN569)
qJA(t)
1
= 150°C;
/t
2
C
−V
J(pk)
CE