2N4923 ON Semiconductor, 2N4923 Datasheet - Page 5

• Manufacturer Part Number: 2N4923
• Description: TRANS NPN GP 1A 80V HP TO225AA
• Manufacturer: ON Semiconductor

Specifications of 2N4923

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 500mA, 1V
• Power - Max: 30W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N4923OS

1000
10
10
700
500
300
200
100
10
10
10
10
10
10
10
10
10
10
10
70
50
30
20
10
− 2
−1
8
7
6
5
4
3
4
3
2
1
0
2.0
−0.2
0
Figure 10. Effects of Base−Emitter Resistance
3.0 5.0
I
C
I
OBTAINED FROM
FIGURE 12
CES
REVERSE
Figure 12. Collector Cut−Off Region
= 2 x I
I
C
−0.1
VALUES
≈ I
CES
CES
30
V
10
BE
T
J
, BASE−EMITTER VOLTAGE (VOLTS)
I
T
C
Figure 8. Current Gain
, JUNCTION TEMPERATURE (°C)
T
0
J
, COLLECTOR CURRENT (mA)
J
= 150°C
= 150°C
20 30
25°C
I
−55 °C
C
60
I
= 10 x I
+0.1
C
100°C
= I
50
CES
CES
+0.2
100
FORWARD
90
200 300 500
25°C
+0.3
2N4921, 2N4922, 2N4923
V
CE
120
V
V
+0.4
CE
= 1.0 V
CE
1000
= 30 V
http://onsemi.com
= 30 V
+0.5
2000
150
5
+2.5
+2.0
+1.5
+1.0
+0.5
−0.5
−1.0
−1.5
−2.0
−2.5
1.0
0.8
0.6
0.4
0.2
1.5
1.2
0.9
0.6
0.3
0
0
0
0.2
2.0
2.0
0.3 0.5
3.0
3.0 5.0
T
J
I
C
= 25°C
V
= 0.1 A
Figure 9. Collector Saturation Region
5.0
BE(sat)
Figure 13. Temperature Coefficients
V
*APPLIES FOR I
CE(sat)
V
BE
10
10
1.0
@ I
Figure 11. “On” Voltage
@ V
I
I
@ I
q
C
C
*q
C
VB
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
/I
0.25 A
VC
B
C
I
2.0
20 30 50
20 30 50
B
CE
FOR V
/I
= 10
, BASE CURRENT (mA)
B
FOR V
= 2.0 V
3.0
= 10
C
/I
BE
B
CE(sat)
5.0
≤
0.5 A
h FE @ V CE + 1.0 V
100 200 300
100 200
10
T
J
= 100°C to 150°C
1.0 A
20
−55 °C to +100°C
2
300 500
30
500 1000
50
T
J
1000
= 25°C
100
2000
2000
200