TIP140 ON Semiconductor, TIP140 Datasheet - Page 5

• Manufacturer Part Number: TIP140
• Description: TRANS DARL NPN 10A 60V TO218AC
• Manufacturer: ON Semiconductor

Specifications of TIP140

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 10A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 5A, 4V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: TIP140OS

NOTE 1: Input pulse width is increased until I
NOTE 2: For NPN test circuit reverse polarities.
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
INPUT
There are two limitations on the power handling ability of
7.0
5.0
3.0
2.0
1.0
0.2
20
10
10
Figure 6. Active−Region Safe Operating Area
T
J
= 150°C
50
MPS−U52
V
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T
15
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
50
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
20
R
= 100
TEST CIRCUIT
BB2
R
1.5 k
BB1
30
TIP140, 145
TIP141, 146
TIP142, 147
dc
V
BB1
C
V
BB2
ACTIVE−REGION SAFE OPERATING AREA
= 25°C
= 10 V
= 0
CM
50
= 1.42 A.
70
Figure 8. Inductive Load
V
TUT
CE
C
http://onsemi.com
MONITOR
− V
100 mH
R
V
S
CE
100
CC
= 0.1
= 20 V
MONITOR
5
I
C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
The data of Figure 6 is based on T
7.0
5.0
2.0
1.0
15
10
VOLTAGE AND CURRENT WAVEFORMS
Figure 7. Unclamped Inductive Load
COLLECTOR
COLLECTOR
CURRENT
VOLTAGE
VOLTAGE
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5
V
V
(BR)CER
INPUT
1.42 A
CE(sat)
−20 V
1.0
2.0
100 ms
w ≈ 7.0 ms (SEE NOTE 1)
5.0
J(pk)
10
100 mJ
= 150_C; T
20
5.0 V
0
0
50
C
100
is