MMBT3904LT1 ON Semiconductor, MMBT3904LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBT3904LT1
• Description: TRANS SS GP NPN 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT3904LT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT3904LT1OSCT

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
- 0.5 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Base Cutoff Current (V
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product (I
Output Capacitance (V
Input Capacitance (V
Input Impedance (V
Voltage Feedback Ratio (V
Small −Signal Current Gain (V
Output Admittance (V
Noise Figure (V
Delay Time
Rise Time
Storage Time
Fall Time
DUTY CYCLE = 2%
300 ns
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
Figure 1. Delay and Rise Time
Equivalent Test Circuit
CE
= 5.0 Vdc, I
B
B
B
B
CE
CE
CE
CE
CE
EB
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
CE
CE
CE
CB
= 10 Vdc, I
+10.9 V
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 0.5 Vdc, I
< 1 ns
= 10 Vdc, I
= 1.0 Vdc)
= 30 Vdc, V
= 5.0 Vdc, I
CE
CE
= 30 Vdc, V
= 10 Vdc, I
CE
C
10 k
= 100 mAdc, R
= 10 Vdc, I
C
Characteristic
C
C
= 1.0 mAdc, f = 1.0 kHz)
E
C
E
= 1.0 mAdc, f = 1.0 kHz)
EB
= 0, f = 1.0 MHz)
C
= 10 mAdc, I
= 0, f = 1.0 MHz)
= 10 mAdc, V
C
= 10 mAdc, I
= 3.0 Vdc)
C
(T
EB
= 1.0 mAdc, I
= 1.0 mAdc, f = 1.0 kHz)
A
C
* Total shunt capacitance of test jig and connectors
= 3.0 Vdc)
I
C
= 25°C unless otherwise noted)
(V
= 1.0 mAdc, f = 1.0 kHz)
+3 V
S
= 10 mAdc, I
I
C
CC
= 1.0 k ohms, f = 1.0 kHz)
= 10 mAdc, I
C
= 3.0 Vdc, V
E
= 0)
CE
275
= 0)
C
(V
B
S
= 20 Vdc, f = 100 MHz)
CC
http://onsemi.com
= 0)
< 4 pF*
B1
= 3.0 Vdc,
B1
= I
10 < t
DUTY CYCLE = 2%
BE
B2
= 1.0 mAdc)
= − 0.5 Vdc,
2
1
= 1.0 mAdc)
< 500 ms
0
- 9.1 V′
t
1
Figure 2. Storage and Fall Time
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
H
C
CEX
h
I
h
NF
+10.9 V
h
h
BL
f
t
t
obo
t
t
ibo
FE
T
oe
ie
re
fe
d
s
r
f
Equivalent Test Circuit
< 1 ns
0.65
1N916
Min
100
300
100
10 k
6.0
1.0
0.5
1.0
40
60
40
70
60
30
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.85
0.95
300
400
200
0.2
0.3
4.0
8.0
8.0
5.0
50
50
10
40
35
35
50
−
−
−
−
−
−
−
−
+3 V
275
X 10
mmhos
nAdc
nAdc
MHz
C
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
ns
ns
S
−
−
< 4 pF*
− 4