MMBT3906LT1 ON Semiconductor, MMBT3906LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBT3906LT1
• Description: TRANS SS GP PNP 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT3906LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Power Dissipation Pd: 300mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: -40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT3906LT1OSCT

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CB
EB
= −1.0 mAdc, I
= −10 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −1.0 mAdc, V
= −100 mAdc, V
= −0.5 Vdc, I
= −30 Vdc, V
= −30 Vdc, V
= −5.0 Vdc, I
C
E
B
B
B
B
B
C
CE
CE
CE
E
EB
EB
= 0)
= 0)
CE
CE
CE
CE
CE
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= −1.0 Vdc)
= −1.0 Vdc)
= −20 Vdc, f = 100 MHz)
= −3.0 Vdc)
= −3.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −10 Vdc, f = 1.0 kHz)
= −5.0 Vdc, R
= −1.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
S
= 1.0 kW, f = 1.0 kHz)
(V
(V
I
C
CC
CC
= −10 mAdc, I
I
= −3.0 Vdc, V
= −3.0 Vdc, I
B1
http://onsemi.com
= I
B2
= −1.0 mAdc)
B1
2
C
BE
= −1.0 mAdc)
= −10 mAdc,
= 0.5 Vdc,
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
H
C
h
CEX
NF
I
h
h
h
BL
f
t
obo
t
t
t
FE
ibo
oe
T
re
fe
d
s
ie
r
f
−0.65
−5.0
Min
−40
−40
100
250
100
2.0
0.1
3.0
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
−50
−50
300
400
225
4.5
4.0
10
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
kW
dB
pF
pF
ns
ns
−
−
− 4