MMBTA13LT1 ON Semiconductor, MMBTA13LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBTA13LT1
• Description: TRANS SS DARL NPN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA13LT1

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBTA13LT1OSCT

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product (Note 4)
T
= |h
(I
(V
(V
(I
(I
(I
(I
(I
C
C
C
C
C
C
CB
EB
fe
= 100 mAdc, V
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, V
= 10 mAdc, V
| • f
= 10 Vdc, I
= 30 Vdc, I
test
.
C
E
CE
CE
B
BE
= 0)
= 0)
CE
CE
= 0.1 mAdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
MMBTA13
MMBTA14
MMBTA13
MMBTA14
V
Symbol
V
(BR)CES
I
CE(sat)
I
V
h
CBO
EBO
f
FE
BE
T
10,000
10,000
20,000
5000
Min
125
30
−
−
−
−
Max
100
100
1.5
2.0
−
−
−
−
−
−
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
−