MMBTA92LT1 ON Semiconductor, MMBTA92LT1 Datasheet
MMBTA92LT1
Manufacturer Part Number
MMBTA92LT1
Description
TRANS SS PNP 300V HV SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTA92LT1G.pdf
(4 pages)
Specifications of MMBTA92LT1
Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
225mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMBTA92LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA92LT1
Manufacturer:
MOTOROLA
Quantity:
26 715
Part Number:
MMBTA92LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MMBTA92LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBTA92LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBTA92LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBTA92LT1G,
MMBTA93LT1G
High Voltage Transistors
PNP Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 8
MAXIMUM RATINGS
DEVICE MARKING
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
Total Device Dissipation FR−5 Board
Thermal Resistance, Junction to Ambient
Total Device Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Alumina Substrate,
Derate above 25°C
A
Characteristic
Rating
= 25°C
(2)
T
A
= 25°C
Symbol
V
V
V
CEO
CBO
EBO
I
C
Symbol
T
R
R
J
P
P
, T
qJA
qJA
D
D
−300
−300
stg
−5.0
92
−500
−55 to
+150
Max
225
556
300
417
1.8
2.4
−200
−200
−5.0
93
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBTA92LT1G
MMBTA92LT3G
MMBTA93LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
SOT−23 (TO−236AF)
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
CASE 318
STYLE 6
2x
M
G
2
http://onsemi.com
BASE
1
= Specific Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
3
COLLECTOR
Publication Order Number:
EMITTER
3
2
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
MARKING
DIAGRAM
MMBTA92LT1/D
Shipping
2x MG
G
†
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MMBTA92LT1 Summary of contents
Page 1
... Rating Symbol Collector −Emitter Voltage V Collector −Base Voltage V Emitter −Base Voltage V Collector Current — Continuous DEVICE MARKING MMBTA92LT1 = 2D; MMBTA93LT1 = 2E THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 25°C A Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) (2) ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −1.0 mAdc Collector −Base Breakdown Voltage (I = −100 mAdc Emitter −Base Breakdown Voltage (I = −100 ...
Page 3
C @ 1MHz 1MHz cb 1.0 0.1 0.1 1 REVERSE VOLTAGE (VOLTS) R Figure 2. Capacitance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1 COLLECTOR CURRENT (mA) C ...
Page 4
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBTA92LT1/D ° ...