2N5550 ON Semiconductor, 2N5550 Datasheet - Page 3

• Manufacturer Part Number: 2N5550
• Description: TRANS NPN SS GP 0.6A 140V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N5550

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N5550OS

500
300
200
100
10
10
10
10
10
7.0
5.0
1.0
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0.6
50
30
20
10
10
10
0
−1
−2
−3
−4
−5
0.005
0.1
1
0
0.4
0.3
V
25°C
−55 °C
I
CE
C
T
T
0.01
REVERSE
J
= 1.0 mA
J
Figure 3. Collector Cut−Off Region
= 30 V
= 125°C
= 125°C
0.2
0.2
V
BE
75°C
25°C
, BASE−EMITTER VOLTAGE (VOLTS)
0.1
0.02
0.3
0
I
C
= I
FORWARD
0.5
0.1
CES
0.05
0.7
0.2
0.3
0.1
1.0
Figure 2. Collector Saturation Region
10 mA
0.4
Figure 1. DC Current Gain
I
2N5550, 2N5551
C
0.2
http://onsemi.com
, COLLECTOR CURRENT (mA)
0.5
I
B
2.0
, BASE CURRENT (mA)
0.6
3
3.0
0.5
1.0
0.8
0.6
0.4
0.2
0
0.1
5.0
30 mA
1.0
T
J
V
0.2
V
= 25°C
CE(sat)
BE(sat)
7.0
0.3
@ I
@ I
2.0
0.5
10
C
C
I
Figure 4. “On” Voltages
C
/I
/I
, COLLECTOR CURRENT (mA)
B
B
= 10
= 10
1.0
2.0
5.0
20
3.0
5.0
100 mA
10
30
10
20
50
20
V
V
CE
CE
30
= 1.0 V
= 5.0 V
70
50
100
50
100