TIP122 ON Semiconductor, TIP122 Datasheet - Page 5
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TIP122
Manufacturer Part Number
TIP122
Description
TRANS DARL NPN 5A 100V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.TIP122G.pdf
(7 pages)
Specifications of TIP122
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
4V @ 20mA, 5A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 3A, 3V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage(max)
100V
Emitter-base Voltage (max)
5V
Collector-emitter Saturation Voltage
2@12mA@3A/4@20mA@5AV
Collector Current (dc) (max)
5A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Not Compliant
Other names
TIP122OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP122
Manufacturer:
ST
Quantity:
20 000
Part Number:
TIP122 TO-220
Manufacturer:
吉林华微
Quantity:
20 000
Company:
Part Number:
TIP122G
Manufacturer:
ON Semiconductor
Quantity:
253
10,000
0.05
0.02
5.0
2.0
1.0
0.5
0.2
0.1
5000
3000
2000
1000
20
10
500
300
200
100
1.0
50
30
20
10
1.0
Figure 5. Active-Region Safe Operating Area
2.0
2.0
V
Figure 6. Small-Signal Current Gain
CE
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
T
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
3.0
T
V
I
C
= 150°C
C
CE
C
5.0
PNP
NPN
= 3.0 Adc
= 25°C
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
= 25°C (SINGLE PULSE)
= 4.0 Vdc
CEO
5.0
10
f, FREQUENCY (kHz)
7.0
20
10
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
50
dc
500 ms
20
100
1 ms
30
5 ms
200
50
100 ms
http://onsemi.com
500
70
100
1000
5
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150°C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
300
200
100
70
50
30
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
0.1
0.2
J(pk)
PNP
NPN
0.5
may be calculated from the data in Figure 4.
V
R
Figure 7. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.0
C
2.0
ib
5.0
C
ob
J(pk)
10
T
J
= 150°C; T
20
= 25°C
C
50
- V
J(pk)
C
100
CE
is