TIP50 ON Semiconductor, TIP50 Datasheet - Page 4
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TIP50
Manufacturer Part Number
TIP50
Description
TRANS NPN 1A 400V HI PWR TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.TIP47G.pdf
(6 pages)
Specifications of TIP50
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 200mA, 1A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 300mA, 10V
Power - Max
2W
Frequency - Transition
10MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TIP50OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP50
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
TIP50G
Manufacturer:
ON Semiconductor
Quantity:
4 050
Part Number:
TIP50G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
TIP50TU
Manufacturer:
Fairchi/ON
Quantity:
1 000
INPUT
0.05
0.02
5.0
2.0
1.0
0.5
0.2
0.1
0.05
5.0
2.0
1.0
0.5
0.2
0.1
5.0
Note A: Input pulse width is increased until I
Figure 5. Active Region Safe Operating Area
0.02
CURVES APPLY
BELOW RATED V
T
C
≤ 25°C
50
10
V
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
V
CE
50
BB1
0.05
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
MJE171
= 10 V
I
C
20
Figure 6. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
CEO
0.1
V
0
t
t
R
R
s
150 W
100 W
BB2
f
BB1
BB2
=
50
=
=
0.2
dc
V
CE
100
1.0 ms
TIP47
TIP48
TIP50
MONITOR
0.5
TUT
Figure 8. Inductive Load Switching
0.1 W
R
CM
S
T
V
I
C
200
=
J
CC
/I
= 0.63 A.
= 25°C
B
= 200 V
= 5.0
1.0
100 mH
I
100 ms
C
V
500 ms
CC
MONITOR
http://onsemi.com
= 20 V
500
2.0
4
+ 4.5
+ 3.5
+ 2.5
+ 1.5
+ 0.5
- 0.5
- 1.5
- 2.5
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
COLLECTOR
COLLECTOR
0.02
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
0
CURRENT
VOLTAGE
VOLTAGE
INPUT
*APPLIES FOR I
q
q
VB
Figure 7. Temperature Coefficients
VC
V
0.05
0.63 A
CE(sat)
FOR V
J(pk)
V
- 5 V
FOR V
10 V
CER
0 V
0 V
I
C
, COLLECTOR CURRENT (AMPS)
BE
CE(sat)
may be calculated from the data in
0.1
C
/I
B
≤ h
FE
0.2
/5
100 ms
t
(SEE NOTE A)
w
≈ 3 ms
+ 25°C to + 150°C
+ 25°C to + 150°C
J(pk)
0.5
- 55°C to + 25°C
- 55°C to + 25°C
= 150_C; T
1.0
C
− V
2.0
J(pk)
C
CE
is