MJE803 ON Semiconductor, MJE803 Datasheet - Page 5

• Manufacturer Part Number: MJE803
• Description: TRANS DARL NPN 4A 80V TO225AA
• Manufacturer: ON Semiconductor

Specifications of MJE803

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 2.8V @ 40mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 2A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 4A
• Dc Current Gain: 100@4A@3V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-225
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: MJE803OS

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MJE702G
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MJE802
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MJE803G
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(Pb−Free)
(Pb−Free)
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TO−225
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TO−225
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TO−225
TO−225
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TO−225
TO−225
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TO−225
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