MJE5852 ON Semiconductor, MJE5852 Datasheet - Page 4

• Manufacturer Part Number: MJE5852
• Description: TRANS PWR PNP 8A 400V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE5852

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 5V @ 3A, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 5A, 5V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: MJE5852OS

200
100
10
10
10
10
10
10
7.0
5.0
3.0
2.0
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
0
+0.2
5
4
3
2
1
0
0.1
0.1
Figure 3. Collector−Emitter Saturation Voltage
T
J
REVERSE
= 150°C
100°C
+0.1
25°C
0.2
0.2
I
T
C
Figure 5. Collector Cutoff Region
T
J
/I
J
B
= 150°C
V
= 25°C
0.3
= 4
BE
0.3
Figure 1. DC Current Gain
I
I
C
C
, BASE−EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
0
0.5
0.5
V
CE
FORWARD
−0.1
0.7
0.7
= 5 V
1.0
1.0
−0.2
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
2.0
MJE5850, MJE5851, MJE5852
−0.3
T
3.0
J
3.0
= 150°C
V
CE
T
5.0
= 200 V
J
−0.4
5.0
= 25°C
http://onsemi.com
7.0
7.0
−0.5
10
10
4
3000
2000
1000
500
200
100
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
50
30
0
0
0.01
0.1
0.1
I
C
= 0.25 A
T
0.2
J
0.02 0.05
= 25°C
Figure 2. Collector Saturation Region
0.2
T
0.5
J
Figure 4. Base−Emitter Voltage
= 150°C
0.3
1.0 A
I
1.0
I
C
C
V
/I
, COLLECTOR CURRENT (AMPS)
R
Figure 6. Capacitance
B
, REVERSE VOLTAGE (VOLTS)
I
B
= 4
0.1
, BASE CURRENT (AMPS)
0.5
5.0
0.7
0.2
2.5 A
10
1.0
0.5
C
C
20
ib
ob
1.0
50
2.0
5.0 A
100
3.0
2.0
T
J
200
T
= 25°C
J
5.0
= 25°C
5.0
500 1000
7.0
10
10