MJD45H11-001 ON Semiconductor, MJD45H11-001 Datasheet - Page 2

TRANS PWR PNP 8A 80V STR DPAK-3

MJD45H11-001

Manufacturer Part Number
MJD45H11-001
Description
TRANS PWR PNP 8A 80V STR DPAK-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD45H11-001

Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
1.75W
Frequency - Transition
90MHz
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJD45H11-001OS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Collector Capacitance
Gain Bandwidth Product
Delay and Rise Times
Storage Time
Fall Time
(I
(V
(V
(I
(I
(V
(V
(V
(I
(I
(I
(I
C
C
C
C
C
C
C
CE
EB
CE
CE
CB
= 30 mA, I
= 8 Adc, I
= 8 Adc, I
= 0.5 Adc, V
= 5 Adc, I
= 5 Adc, I
= 5 Adc, I
= Rated V
= 5 Vdc)
= 1 Vdc, I
= 1 Vdc, I
= 10 Vdc, f
B
B
B1
B1
B1
B
= 0.4 Adc)
= 0.8 Adc)
C
C
= 0)
CEO
CE
= 0.5 Adc)
= I
= I
test
= 2 Adc)
= 4 Adc)
B2
B2
= 10 Vdc, f = 20 MHz)
, V
= 1 MHz)
= 0.5 Adc)
= 0.5 Adc
BE
= 0)
Characteristic
(T
C
= 25_C unless otherwise noted)
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V
Symbol
V
V
CEO(sus)
t
I
CE(sat)
BE(sat)
I
d
h
C
CES
EBO
f
t
t
FE
+ t
T
cb
s
f
r
Min
80
60
40
Typ
130
300
135
500
500
140
100
45
85
90
Max
1.0
1.0
1.5
1
MHz
Unit
Vdc
Vdc
Vdc
mA
mA
pF
ns
ns
ns

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