MJD350T4 ON Semiconductor, MJD350T4 Datasheet - Page 3

• Manufacturer Part Number: MJD350T4
• Description: TRANS PWR PNP 0.5A 300V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD350T4

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Other names: MJD350T4OSCT

200
100
70
50
30
20
10
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.2
0.1
5
1
0.01
T
J
7
= 150°C
SINGLE PULSE
- 55°C
D = 0.5
25°C
10
0.02
0.05
0.01
0.2
0.1
0.03
Figure 3. DC Current Gain
I
C
V
V
1
20
, COLLECTOR CURRENT (mA)
CE
CC
0.05
= 2 V
= 10 V
30
MJD350
0.1
50 70
0.8
0.6
0.4
0.2
1
0
0.2
10
100
0.3
V
T
CE(sat)
J
= 25°C
200
0.5
20
@ I
C
Figure 5. Thermal Response
300
/I
I
Figure 2. “On” Voltages
30
C
I
http://onsemi.com
B
C
/I
, COLLECTOR CURRENT (mA)
1
= 10
B
= 5
V
BE(sat)
V
500
BE
50
@ V
MJD340
2
t, TIME (ms)
3
@ I
CE
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
C
3
J(pk)
qJC(t)
qJC
/I
= 10 V
B
0.8
0.6
0.4
0.2
= 10
1
0
= 8.33°C/W MAX
- T
100
5
= r(t) R
5
C
V
= P
V
T
BE(sat)
7
CE(sat)
J
qJC
(pk)
= 25°C
10
1
10
q
@ I
200
JC(t)
V
C
BE
/I
B
300
Figure 4. “On” Voltages
I
20
@ V
C
= 10
, COLLECTOR CURRENT (mA)
20
CE
30
= 10 V
500
30
MJD350
50
P
(pk)
50 70
DUTY CYCLE, D = t
100
t
1
t
2
100
200
300
I
C
/I
200
1
B
/t
I
2
C
= 10
/I
500
300 500
B
= 5
1 k