BC817-25LT1G ON Semiconductor, BC817-25LT1G Datasheet - Page 9

• Manufacturer Part Number: BC817-25LT1G
• Description: TRANS NPN GP 500MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC817-25LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Frequency: 100 MHz
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 160
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC817-25LT1GOSTR

BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
TYPICAL CHARACTERISTICS − BC817−16LT1, BC817−25LT1, BC817−40LT1
1
1 ms
100 ms
10 ms
1 s
Thermal Limit
0.1
0.01
Single Pulse Test @ T
= 25°C
A
0.001
0.01
0.1
1
10
100
V
(Vdc)
CE
Figure 24. Safe Operating Area
http://onsemi.com
9