MJE521G ON Semiconductor, MJE521G Datasheet

MJE521G

Manufacturer Part Number

MJE521G

Description

TRANS POWER NPN 4A 40V TO225AA

Manufacturer

ON Semiconductor

Type

Medium Powerr

Datasheets

1.MJE521.pdf (4 pages)

2.MJE521G.pdf (3 pages)

Specifications of MJE521G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

40V

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 1A, 1V

Power - Max

40W

Mounting Type

Through Hole

Package / Case

TO-225-3

Current, Collector

4 A

Current, Gain

Package Type

TO-225

Polarity

NPN

Power Dissipation

40 W

Primary Type

Resistance, Thermal, Junction To Case

3.12 °C/W

Voltage, Breakdown, Collector To Emitter

40 V

Voltage, Collector To Base

40 V

Voltage, Collector To Emitter

40 V

Voltage, Emitter To Base

4 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

Vce Saturation (max) @ Ib, Ic

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Other names

MJE521GOS

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Î Î Î Î Î Î Î Î Î Î Î

MJE521

Plastic Medium−Power

NPN Silicon Transistor

switching circuits. Recommended for use in 5 to 10 Watt audio

amplifiers utilizing complementary symmetry circuitry.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

February, 2006 − Rev. 5

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

These devices are designed for use in general−purpose amplifier and

DC Current Gain − h

Complementary to PNP MJE371

Pb−Free Package is Available*

Derate above 25_C

Characteristic

Rating

− Continuous

− Peak

= 40 (Min) @ I

= 1.0 Adc

= 25_C

Î Î Î Î

Symbol

, T

CEO

stg

Î Î Î Î

–65 to +150

Value

0.32

Max

3.12

4.0

8.0

2.0

Î Î Î

mW/_C

_C/W

Unit

Vdc

Adc

MJE521

MJE521G

Device

POWER TRANSISTORS

40 VOLTS, 40 WATTS

ORDERING INFORMATION

2 1

JE521 = Device Code

MARKING DIAGRAM

NPN SILICON

http://onsemi.com

4 AMPERES

(Pb−Free)

= Year

= Work Week

= Pb−Free Package

Package

TO−225

Publication Order Number:

JE521G

YWW

CASE 77

STYLE 1

TO−225

500 Units/Box

Shipping

MJE521/D

Related parts for MJE521G

MJE521G Summary of contents

Page 1

... AMPERES POWER TRANSISTORS NPN SILICON 40 VOLTS, 40 WATTS TO−225 CASE 77 STYLE MARKING DIAGRAM YWW JE521G Y = Year WW = Work Week JE521 = Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE521 TO−225 500 Units/Box TO−225 500 Units/Box MJE521G (Pb−Free) Publication Order Number: MJE521/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T = 150°C 1.0 J 0.5 SECOND BREAKDOWN LIMITED 0.3 BONDING WIRE LIMITED 0.2 THERMALLY LIMITED @ T = 25°C C 0.1 2.0 3.0 5 COLLECTOR−EMITTER VOLTAGE (VOLTS) CE Figure ...

Page 4

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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