MMBT4401LT1G ON Semiconductor, MMBT4401LT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT4401LT1G
• Description: TRANS GP SS NPN 40V SOT23
• Manufacturer: ON Semiconductor
• Type: Switchingr

Specifications of MMBT4401LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 40
• Frequency: 250 MHz
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 6 V
• Dc: 06+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MMBT4401LT1GOS; MMBT4401LT1GOS; MMBT4401LT1GOSTR

these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
This group of graphs illustrates the relationship between h
8.0
6.0
4.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
10
0
0.01 0.02 0.05
0.1
0.2
Figure 11. Voltage Feedback Ratio
I
I
I
I
C
C
C
C
Figure 8. Frequency Effects
0.3
= 1.0 mA, R
= 500 mA, R
= 100 mA, R
= 50 mA, R
0.1
I
C
, COLLECTOR CURRENT (mA)
0.2
0.5 0.7 1.0
f, FREQUENCY (kHz)
S
0.5
S
S
S
= 4.0 kW
= 150 W
= 200 W
= 2.0 kW
1.0
5.0 k
2.0 k
1.0 k
50 k
20 k
10 k
SMALL−SIGNAL CHARACTERISTICS
500
2.0 5.0
0.1
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
2.0
V
V
CE
R
RS =
RS =
CE
0.2
S
10
3.0
= OPTIMUM
= 10 Vdc, T
SOURCE
RESISTANCE
= 10 Vdc, f = 1.0 kHz, T
Figure 10. Input Impedance
0.3
20
I
C
5.0 7.0
, COLLECTOR CURRENT (mA)
h PARAMETERS
http://onsemi.com
50
0.5 0.7 1.0
A
100
10
= 25°C; Bandwidth = 1.0 Hz
fe
4
and other “h” parameters for this series of transistors. To obtain
6.0
4.0
2.0
8.0
10
0
100
50
5.0
2.0
1.0
50
10
20
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
2.0 3.0
0.1
100 200
A
f = 1.0 kHz
Figure 9. Source Resistance Effects
= 25°C
0.2
NOISE FIGURE
5.0 7.0
I
I
I
I
C
C
C
C
R
Figure 12. Output Admittance
S
= 50 mA
= 100 mA
= 500 mA
= 1.0 mA
, SOURCE RESISTANCE (OHMS)
0.3
500 1.0 k 2.0 k
I
C
, COLLECTOR CURRENT (mA)
10
0.5 0.7 1.0
5.0 k 10 k 20 k
2.0 3.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
50 k
5.0 7.0
100 k
10