2N5551RL1 ON Semiconductor, 2N5551RL1 Datasheet

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2N5551RL1

Manufacturer Part Number
2N5551RL1
Description
TRANS NPN SS GP 0.6A 160V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N5551RL1

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5551RL1G
Manufacturer:
ON Semiconductor
Quantity:
12 750
2N5550, 2N5551
Amplifier Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Pb−Free Packages are Available*
Characteristic
Rating
A
C
Preferred Device
= 25°C
= 25°C
2N5550
2N5551
2N5550
2N5551
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
83.3
140
160
160
180
600
625
200
6.0
5.0
1.5
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
1 2
ORDERING INFORMATION
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
http://onsemi.com
BASE
= Assembly Location
= Year
= Pb−Free Package
2
x = 0 or 1
AYWW G
555x
COLLECTOR
2N
G
Publication Order Number:
EMITTER
3
CASE 29
STYLE 1
1
TO−92
2N5550/D

Related parts for 2N5551RL1

2N5551RL1 Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1.0 mAdc Collector−Base Breakdown Voltage = 100 mAdc Emitter−Base Breakdown Voltage = 10 mAdc ...

Page 3

T = 125°C J 200 25°C 100 −55 ° 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 0.9 0 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 ...

Page 4

V 10 −8 100 0. INPUT PULSE 5.1 k ≤ ...

Page 5

... Device 2N5550 2N5550G 2N5550RLRA 2N5550RLRAG 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 2N5551RL1G 2N5551RLRA 2N5551RLRAG 2N5551RLRM 2N5551RLRMG 2N5551RLRP 2N5551RLRPG 2N55551ZL1 2N55551ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 6

... LEAD DIMENSION IS UNCONTROLLED IN P AND D J SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 Y14.5M, 1982. IS UNCONTROLLED. ...

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