MPS2907ARLRP ON Semiconductor, MPS2907ARLRP Datasheet - Page 2

• Manufacturer Part Number: MPS2907ARLRP
• Description: TRANSISTOR PNP GP SS 60V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPS2907ARLRP

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f T is defined as the frequency at which |h fe | extrapolates to unity.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Current
DC Current Gain
Collector–Emitter Saturation Voltage (Note 1.)
Base–Emitter Saturation Voltage (Note 1.)
Current–Gain – Bandwidth Product (Notes 1. and 2.),
Output Capacitance
Input Capacitance
Turn–On Time
Delay Time
Rise Time
Turn–Off Time
Storage Time
Fall Time
(I C = –10 mAdc, I B = 0)
(I C = –10 mAdc, I E = 0)
(I E = –10 mAdc, I C = 0)
(V CE = –30 Vdc, V EB(off) = –0.5 Vdc)
(V CB = –50 Vdc, I E = 0)
(V CB = –50 Vdc, I E = 0, T A = 150 C)
(V CE = –30 Vdc, V EB(off) = –0.5 Vdc)
(I C = –0.1 mAdc, V CE = –10 Vdc)
(I C = –1.0 mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10 Vdc)
(I C = –150 mAdc, V CE = –10 Vdc) (Note 1.)
(I C = –500 mAdc, V CE = –10 Vdc) (Note 1.)
(I C = –150 mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
(I C = –150 mAdc, I B = –15 mAdc)
(I C = –500 mAdc, I B = –50 mAdc)
(I C = –50 mAdc, V CE = –20 Vdc, f = 100 MHz)
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz)
(V EB = –2.0 Vdc, I C = 0, f = 1.0 MHz)
Characteristic
(T A = 25 C unless otherwise noted)
(V CC = –30 Vdc, I C = –150 mAdc,
I
I B1 = –15 mAdc) (Figures 1 and 5)
(V CC = –6.0 Vdc, I C = –150 mAdc,
I
I B1 = I B2 = 15 mAdc) (Figure 2)
CC
CC
I
15
15
Ad ) (Fi
http://onsemi.com
MPS2907A
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C
C
2
1
2)
d 5)
V (BR)CEO
V (BR)CBO
V (BR)EBO
V CE(sat)
V BE(sat)
Symbol
I CEX
I CBO
C obo
C ibo
h FE
t on
t off
I B
f T
t d
t s
t r
t f
–5.0
Min
–60
–60
100
100
100
200
75
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.01
Max
–0.4
–1.6
–1.3
–2.6
–50
–10
–50
300
100
8.0
30
45
10
40
80
30
–
–
–
–
–
–
–
–
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
pF
pF
ns
ns
ns
ns
ns
ns
–