MPS8599 ON Semiconductor, MPS8599 Datasheet - Page 5

• Manufacturer Part Number: MPS8599
• Description: TRANSISTOR PNP GP BIPO 80V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPS8599

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 15. MPS8098/99 Collector Saturation Region
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
2.0
1.6
1.2
0.8
0.4
1.0
0.8
0.6
0.4
0.2
0
0
0.02
0.2
0.2
10 mA
T
I
C
J
=
= 25°C
R
Figure 13. MPS8098/99 “ON” Voltages
qVB
0.05
0.5
0.5
Figure 17. MPS8098/99 Base−Emitter
FOR V
20 mA
0.1
1.0
1.0
I
C
V
Temperature Coefficient
=
BE(sat)
I
I
C
C
BE
V
V
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
(NPN) MPS8098, MPS8099*, (PNP) MPS8598, MPS8599*
BE
CE(sat)
I
0.2
2.0
2.0
B
@ V
, BASE CURRENT (mA)
@ I
50 mA
I
C
CE
@ I
C
=
/I
B
= 5.0 V
NPN
C
5.0
0.5
5.0
= 10
/I
B
= 10
100 mA
−55°C TO 125°C
1.0
10
10
I
C
=
2.0
20
20
5.0
50
50
200 mA
I
T
C
http://onsemi.com
J
=
= 25°C
100
100
10
200
200
20
5
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
2.0
1.6
1.2
0.8
0.4
1.0
0.8
0.6
0.4
0.2
Figure 16. MPS8598/99 Collector Saturation Region
0
0
0.02
0.2
0.2
T
T
10 mA
J
J
I
= 25°C
C
R
= 25°C
=
qVB
0.05
0.5
Figure 18. MPS8598/99 Base−Emitter
Figure 14. MPS8598/99 “ON” Voltages
0.5
FOR V
1.0
0.1
1.0
V
Temperature Coefficient
I
C
BE(sat)
I
BE
C
V
, COLLECTOR CURRENT (mA)
V
20 mA
, COLLECTOR CURRENT (mA)
BE
CE(sat)
I
I
0.2
2.0
C
B
2.0
, BASE CURRENT (mA)
@ V
=
−55°C TO 125°C
@ I
CE
@ I
C
/I
B
0.5
= 5.0 V
5.0
C
5.0
PNP
= 10
/I
B
50 mA
= 10
I
C
1.0
10
10
=
2.0
20
20
100 mA
I
C
=
5.0
50
50
200 mA
100
10
I
100
C
=
200
20
200