MPSA93RLRM ON Semiconductor, MPSA93RLRM Datasheet - Page 2

• Manufacturer Part Number: MPSA93RLRM
• Description: TRANS PNP GP BIPO LP 200V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA93RLRM

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 200V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Collector−Base Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
= −100 mAdc, I
= −1.0 mAdc, I
= −100 mAdc, I
= −1.0 mAdc, V
= −10 mAdc, V
= −30 mAdc, V
= −20 mAdc, I
= −20 mAdc, I
= −10 mAdc, V
= −200 Vdc, I
= −160 Vdc, I
= −3.0 Vdc, I
= −20 Vdc, I
B
B
E
C
B
E
C
CE
CE
CE
E
E
CE
= −2.0 mAdc)
= −2.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
= −10 Vdc)
= −10 Vdc)
= −20 Vdc, f = 100 MHz)
= −10 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
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All Types
All Types
MPSA92
MPSA93
MPSA92
MPSA93
MPSA92
MPSA93
MPSA92
MPSA93
MPSA92
MPSA93
MPSA92
MPSA93
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
h
C
CBO
EBO
f
FE
T
cb
−300
−200
−300
−200
−5.0
Min
25
40
25
25
50
−
−
−
−
−
−
−
−
−0.25
−0.25
Max
−0.1
−0.5
−0.4
−0.9
6.0
8.0
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−