MPSW63RLRAG ON Semiconductor, MPSW63RLRAG Datasheet - Page 3

• Manufacturer Part Number: MPSW63RLRAG
• Description: TRANS PNP DARL BIPO 1W 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSW63RLRAG

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

+5.0
+4.0
+3.0
+2.0
+1.0
−1.0
−2.0
−3.0
−4.0
−5.0
7.0
5.0
3.0
2.0
20
15
10
0
−0.3
−0.1
C
−0.5
C
*APPLIES FOR I
*R
obo
−0.2
ibo
R
qVC
qVB
T
f = 1.0 MHz
−1.0
Figure 4. Temperature Coefficients
FOR V
J
FOR V
= 25°C
−0.5
−2.0
CE(sat)
V
BE
I
C
R
Figure 6. Capacitance
C
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
−1.0
/I
B
≤ h
−5.0
FE
−2.0
/100
−10
−5.0
−20
−50°C TO +25°C
−50°C TO +25°C
−10
+25°C TO +125°C
+25°C TO +125°C
−50
−20
−100
−30
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−300
3
−500
−200
−100
−2 k
−1 k
600
400
300
200
100
60
40
30
20
−0.3
−1.5
Figure 5. Current−Gain — Bandwidth Product
Figure 7. Active Region, Safe Operating Area
−0.5
−2.0
DUTY CYCLE ≤ 10%
T
T
V
−1.0 −2.0
J
A
CE
= 25°C
= 25°C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
V
C
, COLLECTOR CURRENT (mA)
CE
= −20 V
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−5.0
T
C
= 25°C
−10
−20
−10
1.0 mS
−50
−10 V
1.0 s
−100
−5.0 V
−20
100 ms
−300
−30