BC517 ON Semiconductor, BC517 Datasheet - Page 2

• Manufacturer Part Number: BC517
• Description: TRANS DARL NPN 30V 1A TO-92
• Manufacturer: ON Semiconductor

Specifications of BC517

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30000 @ 20mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC517OS

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Current−Gain − Bandwidth Product (Note 2)
T
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
= |h
C
C
E
C
C
C
C
CE
CB
CB
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 20 mAdc, V
= 100 mAdc, I
= 10 mAdc, V
= 10 mAdc, V
fe
= 30 Vdc)
= 30 Vdc, I
= 10 Vdc, I
| • f
test
E
E
C
C
BE
CE
CE
CE
= 0)
B
= 0)
= 0)
= 0)
= 0.1 mAdc)
= 0)
= 2.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
BC517
2
TRANSISTOR
IDEAL
V
V
V
Symbol
V
V
(BR)CBO
(BR)EBO
(BR)CES
I
I
I
CE(sat)
BE(on)
h
CES
CBO
EBO
f
FE
T
30,000
Min
30
40
10
−
−
−
−
−
−
Typ
200
−
−
−
−
−
−
−
−
−
Max
500
100
100
1.0
1.4
−
−
−
−
−
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
−