BC618 ON Semiconductor, BC618 Datasheet - Page 2

• Manufacturer Part Number: BC618
• Description: TRANSISTOR DARL NPN 55V TO-92
• Manufacturer: ON Semiconductor

Specifications of BC618

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 55V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 200µA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 200mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 150MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC618OS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Base −Emitter Saturation Voltage
DC Current Gain
Current−Gain − Bandwidth Product
Output Capacitance
Input Capacitance
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
E
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 10 mAdc, V
= 100 mAdc, I
= 10 mAdc, I
= 200 mA, I
= 200 mA, I
= 100 mA, V
= 10 mA, V
= 200 mA, V
= 1.0 A, V
= 500 mA, V
= 10 Vdc, I
= 60 Vdc, I
= 5.0 V, I
= 60 Vdc, V
= 10 V, I
CE
E
E
CE
B
B
CE
C
= 0, f = 1.0 MHz)
CE
CE
E
C
= 0, f = 1.0 MHz)
= 5.0 Vdc)
E
= 0.2 mA)
= 0.2 mA)
BE
= 0)
BE
= 5.0 Vdc)
= 0)
= 0)
= 5.0 Vdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc, P = 100 MHz)
= 0)
= 0)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
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n
http://onsemi.com
i
n
BC618
2
TRANSISTOR
IDEAL
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
I
CE(sat)
BE(sat)
h
C
CES
CBO
EBO
C
f
FE
T
ob
ib
10000
2000
4000
4000
Min
150
55
80
12
−
−
−
−
−
−
−
Typ
4.5
5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
50000
Max
1.1
1.6
7.0
9.0
50
50
50
−
−
−
−
−
−
−
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
−