MPSA63 ON Semiconductor, MPSA63 Datasheet - Page 3

• Manufacturer Part Number: MPSA63
• Description: TRANS PNP DARL BIPO 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA63

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MPSA63OS

−2.0
−1.6
−1.2
−0.8
−0.4
4.0
3.0
2.0
1.0
0.4
0.2
0.1
10
−0.3
−1.0 −2.0
0
200
100
7.0
5.0
3.0
2.0
70
50
30
20
10
−0.3
−0.5
V
f = 100 MHz
T
A
CE
T
= 25°C
A
V
Figure 4. High Frequency Current Gain
= −5.0 V
CE(sat)
= 25°C
−1.0
−0.5 −0.7
−5.0
@ I
−2 −3 −5
I
I
C
C
Figure 2. “On” Voltage
C
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
B
−10 −20
T
= 1000
A
= 125°C
−1.0
−55°C
25°C
−10
V
BE(on)
V
−50
BE(sat)
−20 −30 −50 −100 −200 −300
@ V
−2.0
−100 −200
@ I
CE
C
MPSA62, MPSA63, MPSA64
I
/I
C
= −5.0 V
B
/I
−3.0
B
= 100
= 100
−500
Figure 1. DC Current Gain
http://onsemi.com
I
C
−5.0
, COLLECTOR CURRENT (mA)
−1K
−7.0
3
−1000
−300
−200
−100
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−10
−50
−20
−10
−0.1−0.2
−1.0
I
C
Figure 5. Active Region, Safe Operating Area
T
=
A
= 25°C
−0.5
Figure 3. Collector Saturation Region
−10 mA −50 mA −100 mA −175 mA
T
−2.0
C
−20
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
= 25°C
−1 −2 −5 −10 −20 −50 −100−200−500
(DUTY CYCLE ≤ 10%)
V
CE
−4.0
, COLLECTOR VOLTAGE (VOLTS)
−30
V
CE
I
B
, BASE CURRENT (mA)
−6.0
= −2.0 V
−5.0 V
−50
−10
1.0 s
−70
MPSA62
MPSA63
1.0 ms
−20
−100
−300 mA
−40 −60
−1K−2K
100 ms
T
A
−200
= 25°C
−10 V
−5K
−10K
−300