FJY3014R Fairchild Semiconductor, FJY3014R Datasheet - Page 12
![TRANS NPN 50V 100MA SOT-523F](/photos/5/73/57338/fjy3014r_sml.jpg)
FJY3014R
Manufacturer Part Number
FJY3014R
Description
TRANS NPN 50V 100MA SOT-523F
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJY3014R.pdf
(81 pages)
Specifications of FJY3014R
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-89-3, SOT-523F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FJY3014RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FJY3014R
Manufacturer:
Fairchild Semiconductor
Quantity:
40
Schottky Diodes, Con’t.
1
Products
SMA (DO-214AC)), Con’t.
SS15
SS16
SS18
SS19
DO-41
1N5817
1N5818
1N5819
SB1100
SB120
SB130
SB140
SB150
SB160
SB180
SOD-123
FBR130
MBR0520L
MBR0530
MBR0540
SOT-23
BAR43
BAR43C
BAR43S
BAT54
BAT54A
www.fairchildsemi.com
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Barrier Rectifier
Schottky diode
Schottky diode
Schottky diode
Schottky diode
Schottky diode
Function
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
Schottky
–
Configuration
dual & common
dual & common
dual Series
cathode
Anode
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.75
0.75
0.75
I
(A)
5.5
5.5
5.5
5.5
0.6
0.6
40
40
40
40
5
5
5
30
30
30
30
30
30
30
FSM
R
Resistance
Thermal
JA
340
06
430
430
430
430
430
(°C/W)
88
88
88
88
80
80
80
80
80
80
80
80
80
80
73
-
Maximum
Repetitive
Reverse
Voltage
.36mm 3 1.80mm 3 1.6mm (Refer to p. 71 for detailed package drawing)
V
100
(V)
50
60
80
90
0
30
40
0
30
40
50
60
80
30
0
30
40
30
30
30
30
30
RRM
.9mm 3 1.3mm 3 1.14mm (Refer to p. 7 for detailed package drawing)
Forward
Average
Rectified
Current
I
F (AV)
(A)
0.5
0.5
0.5
0.
0.
0.
0.3
0.3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Instantaneous
(Refer to p. 75 for detailed package drawing)
Voltage (V)
Maximum
Forward
0.385
0.375
0.85
0.85
0.45
0.55
0.85
0.85
0.45
0.51
V
0.7
0.7
0.6
0.5
0.5
0.5
0.7
0.7
1
1
1
1
1
FM
Small Signal
Small Signal
Transistors & Diodes
Transistors & Diodes
Selection Guide
Selection Guide
(µA)
Instantaneous
00
00
00
00
500
500
500
500
500
500
500
500
500
500
00
50
0.5
0.5
0.5
0
0
Maximum
I
RM
@ V
100
50
60
80
90
0
30
40
0
30
40
50
60
80
30
0
15
40
5
5
5
5
5
R
(V)