UNR51A5G0L Panasonic - SSG, UNR51A5G0L Datasheet - Page 2

• Manufacturer Part Number: UNR51A5G0L
• Description: TRANS PNP W/RES 160HFE S-MINI 3P
• Manufacturer: Panasonic - SSG

Specifications of UNR51A5G0L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 80mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 80MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: S-Mini 3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR51A5G0LTR

UNR51A5G
2
−10
−10
400
300
200
100
160
120
−10
80
40
−1
−10
−1
0
0
2
−1
0
−1
Ambient temperature T
Collector current I
Output current I
40
UNR51A5G_h
UNR51A5G_P
UNR51A5G_V
−1
T
V
h
a
P
FE
= 85°C
IN
T
−25°C
−10
25°C
 T
80
 I
 I
a
C
O
−10
O
FE
V
T
T
C
IN
V
a
-T
O
-I
( mA )
120
-I
= 25°C
CE
( mA )
= − 0.2 V
C
a
a
O
= 10 V
(°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
−10
−10
160
2
2
−100
−80
−60
−40
−20
4
2
0
0
−1
0
Collector-emitter voltage V
Collector-base voltage V
T
a
= 25°C
SJH00267AED
UNR51A5G_C
UNR51A5G_I
−4
C
I
C
ob
 V
−10
 V
CE
CB
C
ob
−8
-V
-V
f = 1 MHz
T
CE
a
CB
CB
= 25°C
I
B
CE
= −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
( V )
( V )
−10
−12
2
−10
−10
−10
−10
−10
−10
−10
−10
−1
−1
−1
−2
−1
−2
−3
2
−1
0
Collector current I
− 0.4
25°C
Input voltage V
UNR51A5G_V
UNR51A5G_I
T
V
a
− 0.8
= 85°C
CE(sat)
I
O
 V
−10
−25°C
 I
−1.2
IN
CE(sat)
O
IN
C
C
-V
V
T
I
a
O
C
( mA )
(V)
IN
= 25°C
−1.6
-I
= −5 V
/ I
C
B
= 10
−10
−2.0
2