UNR311100L Panasonic - SSG, UNR311100L Datasheet
UNR311100L
Manufacturer Part Number
UNR311100L
Description
TRANS PNP W/RES 35 HFE SSSMINI-3
Manufacturer
Panasonic - SSG
Datasheet
1.UNR311100L.pdf
(3 pages)
Specifications of UNR311100L
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
80MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SSS Mini3-F1
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
UNR311100LTR
Transistors with built-in Resistor
UNR3111
Silicon PNP epitaxial planar type
For digital circuits
Features
Absolute Maximum Ratings T
Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2008
Suitable for high-density mounting and downsizing of the equipment
Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
= 25°C±3°C
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
V
V
T
P
CBO
I
T
Symbol
CEO
stg
V
C
R
T
j
V
V
I
I
I
V
V
1
h
CE(sat)
CBO
CEO
EBO
R
CBO
f
CEO
FE
OH
OL
/ R
T
1
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
–100
C
C
C
–50
–50
100
125
CB
CE
EB
CE
CC
CC
CB
= –10 mA, I
= –2 mA, I
= –10 mA, I
= –50 V, I
= –6 V, I
= –10 V, I
= –50 V, I
= –5 V, V
= –5 V, V
= –10 V, I
SJH00299AED
C
B
E
B
B
Unit
mW
Conditions
B
C
E
E
mA
B
= 0
°C
°C
= 0
V
V
= 0
= – 0.5 V, R
= –2.5 V, R
= 0
= 0
= –5 mA
= 1 mA, f = 200 MHz
= – 0.3 mA
L
L
= 1 kW
= 1 kW
Package
Marking Symbol: 6A
Internal Connection
Code
Pin Name
SSSMini3-F1
1: Base
2: Emitter
3: Collector
–30%
–4.9
Min
–50
–50
0.8
35
B
R
R
(10 kΩ)
1
2
(10 kΩ)
Typ
1.0
10
80
– 0.25
+30%
Max
– 0.1
– 0.5
– 0.5
– 0.2
1.2
C
E
MHz
Unit
mA
kW
mA
mA
V
V
V
V
V
1
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