DDTC114ELP-7 Diodes Inc, DDTC114ELP-7 Datasheet - Page 3

• Manufacturer Part Number: DDTC114ELP-7
• Description: TRANS PNP PRE BIAS 3-DFN
• Manufacturer: Diodes Inc

Specifications of DDTC114ELP-7

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 10mA, 70mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 250MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTC114ELPDITR

DS30945 Rev. 4 - 2
300
250
200
150
100
0.01
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
50
0.1
10
2
1
0
-60
0
0.1
1
0
-30
25
T , AMBIENT TEMPERATURE ( C)
T , AMBIENT TEMPERATURE ( C)
Fig. 3 Typical Input Voltage vs. T
A
I , COLLECTOR CURRENT (mA)
A
C
Fig. 1 Power Derating Curve
R
Fig. 5 Typical V
θJA
50
0
= 500 C/W
1
°
75
30
T = 85 C
A
100
60
CE(SAT)
T = -55 C
°
T = 150 C
A
A
10
125
90
vs. I
I /I = 10
V = 0.3V
C B
I = 5mA
O
O
°
°
C
°
°
150
A
120
T = 25 C
A
150
175
°
100
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3 of 5
250
200
150
100
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
13.5
10.5
50
7.5
4.5
1.5
0.1
0
15
12
0.1
9
6
3
0
0
0.1
0
I = 0.6mA
B
V , COLLECTOR EMITTER VOLTAGE (V)
1
CE
I = 0.7mA
B
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical DC Current Gain
C
V
2
CE
1
= 5V
T = 150 C
Fig. 6 Typical V
T = 85 C
Fig. 2
A
I = 0.8mA
A
B
3
1
I = 0.9mA
B
°
4
Typical
°
I = 0.1mA
B
10
5
T = -55 C
T = 25 C
I = 0.2mA
B
A
A
I
C
BE
I = 0.3mA
VS
B
6
I = 1.0mA
B
10
vs. I
.
°
°
I = 0.4mA
V
B
100
CE
7
C
I = 0.5mA
B
V
CE
8
© Diodes Incorporated
= 5V
DDTC114ELP
9
1,000
100
10