BCR 108 E6327 Infineon Technologies, BCR 108 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 108 E6327
• Description: TRANSISTOR NPN DGTL SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 108 E6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 170MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR 108 E6327; BCR108E6327INTR; BCR108E6327XT; SP000010736

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR108, T
BCR108F, T
BCR108S, T
BCR108W, T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BCR108
BCR108F
BCR108S
BCR108W
For calculation of R
S
S
S
S
102°C
128°C
115°C
thJA
124°C
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
-65 ... 150
Value
Value
200
250
250
250
100
150
50
50
20
240
140
105
5
90
BCR108...
2007-07-24
Unit
V
mA
mW
°C
Unit
K/W