FJY3004R Fairchild Semiconductor, FJY3004R Datasheet
FJY3004R
Manufacturer Part Number
FJY3004R
Description
TRANS NPN 50V 100MA SOT-523F
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJY3004R.pdf
(4 pages)
Specifications of FJY3004R
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-89-3, SOT-523F
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
200mW
Dc Collector Current
100mA
Dc Current Gain Hfe
56
Transistor Case Style
SOT-523
No. Of Pins
3
Svhc
No
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FJY3004RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FJY3004R
Manufacturer:
Fairchild Semiconductor
Quantity:
2 649
©2006 Fairchild Semiconductor Corporation
FJY3004R Rev. B
FJY3004R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47KΩ, R2=47KΩ)
• Complement to FJY4004R
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics*
* Minimum land pad size.
Electrical Characteristics*
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
V
V
I
T
T
P
R
V
V
I
h
V
f
C
V
V
R
R
C
CBO
T
STG
J
FE
CBO
CEO
EBO
C
(BR)CBO
(BR)CEO
CE(
I(
I(
Symbol
Symbol
θJA
Symbol
cb
1
1
off
on)
/R
sat
)
2
)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature Range
Junction Temperature
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
C
Capacitance
SOT - 523F
Parameter
B
Parameter
Parameter
E
T
a
, by R
=25°C unless otherwise noted
T
C
= 25°C unless otherwise noted
θJA
T
a
= 25°C unless otherwise noted
I
I
V
V
I
V
V
V
V
C
C
C
CB
CE
CE
CB
CE
CE
= 10 uA, I
= 100 uA, I
= 10 mA, I
B
= 40 V, I
= 5 V, I
= 10V, I
= 10 V, I
= 5 V, I
= 0.3V, I
S04
Test Condition
C
1
C
C
C
E
E
E
C
= 5 mA
= 100uA
B
= 5 mA
= 0
B
= 0
= 0, f = 1.0 MHz
= 2mA
= 0.5 mA
E
= 0
-55~150
Value
Max
Equivalent Circuit
100
150
200
600
50
50
10
MIN
0.5
0.9
50
50
56
32
Typ
250
3.7
1.0
47
MAX
0.1
0.3
1.1
62
3
July 2007
Units
Units
www.fairchildsemi.com
°C/W
mW
mA
°C
°C
V
V
V
Units
MHz
KΩ
uA
pF
V
V
V
V
V
tm
Related parts for FJY3004R
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FJY3004R Summary of contents
Page 1
... Input Off Voltage off Input On Voltage on Input Resistor Resistor Ratio Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation FJY3004R Rev S04 25°C unless otherwise noted a Parameter , by R θJA T =25°C unless otherwise noted a Parameter T = 25°C unless otherwise noted ...
Page 2
... Typical Performance Characteristics Figure 1. DC current Gain 1000 100 [mA], COLLECTOR CURRENT C Figure 3. Input off Voltage 1000 100 10 0.0 0.4 0.8 1.2 V (off)[V], INPUT OFF VOLTAGE I FJY3004R Rev. B Figure 2. Input On Voltage 100 47K 47K 0.1 100 1000 0.1 Figure 4. Power Derating 280 V ...
Page 3
... Package Dimensions FJY3004R Rev. B SOT-523F 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...