FJV3101RMTF Fairchild Semiconductor, FJV3101RMTF Datasheet
FJV3101RMTF
Manufacturer Part Number
FJV3101RMTF
Description
TRANSISTOR NPN 50V 100MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJV3101RMTF.pdf
(4 pages)
Specifications of FJV3101RMTF
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FJV3101RMTF
Manufacturer:
Fairchild Semiconductor
Quantity:
11 500
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7K , R2=4.7K )
• Complement to FJV4101R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
f
C
V
V
R
R
C
CBO
T
Symbol
FE
CBO
CEO
EBO
C
J
STG
CE
I
I
ob
1
1
(off)
(on)
/R
CBO
CEO
Symbol
(sat)
2
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
(Bias Resistor Built In)
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJV3101R
I
I
V
V
I
V
V
f=1.0MHz
V
V
C
C
C
CB
CE
CE
CB
CE
CE
=10 A, I
=100 A, I
=10mA, I
=40V, I
=5V, I
=10V, I
=10V, I
=5V, I
=0.3V, I
Test Condition
Marking
C
C
E
E
=10mA
B
C
E
=
=0
B
C
=0
=0.5mA
=5mA
=0
=0
=20mA
R 2 1
Min.
0.5
3.2
0.9
20
50
50
1. Base 2. Emitter 3. Collector
-55 ~ 150
Equivalent Circuit
B
Value
100
200
150
3
50
50
10
Typ.
250
3.7
4.7
1
R1
R2
1
Max.
0.1
0.3
6.2
1.1
3
SOT-23
Units
2
mW
mA
Rev. A, July 2002
V
V
V
C
E
C
C
Units
MHz
K
pF
V
V
V
V
V
A
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FJV3101RMTF Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob V (off) Input Off Voltage I V (on) Input On Voltage I R Input Resistor Resistor Ratio 1 2 ©2002 Fairchild Semiconductor Corporation FJV3101R (Bias Resistor Built In) Marking =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =100 ...
Page 2
... Typical Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 1000 100 10 0.0 0.4 0.8 1.2 V (off)[V], INPUT OFF VOLTAGE I Figure 3. Input Off Voltage ©2002 Fairchild Semiconductor Corporation 100 4. 4. 0.1 0.1 100 1000 280 4. 4.7K 240 2 200 160 120 80 40 ...
Page 3
... Package Demensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, July 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ ...