FJV3114RMTF Fairchild Semiconductor, FJV3114RMTF Datasheet
FJV3114RMTF
Manufacturer Part Number
FJV3114RMTF
Description
TRANSISTOR NPN 50V 100MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJV3114RMTF.pdf
(4 pages)
Specifications of FJV3114RMTF
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2006 Fairchild Semiconductor Corporation
FJV3114R Rev. B
FJV3114R
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7KΩ, R2=47KΩ)
• Complement to FJV4114R
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics*
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
V
V
I
T
T
P
V
V
I
h
V
f
C
V
V
R
R
C
CBO
T
STG
J
FE
CBO
CEO
EBO
C
(BR)CBO
(BR)CEO
CE(
I(
I(
Symbol
Symbol
cb
1
1
off
on)
/R
sat
)
2
)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature Range
Junction Temperature
Collector Power Dissipation
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
1. Base 2. Emitter 3. Collector
3
Capacitance
Parameter
1
SOT-23
Parameter
2
, by R
T
C
= 25°C unless otherwise noted
θJA
T
a
= 25°C unless otherwise noted
I
I
V
V
I
V
V
V
V
C
C
C
CB
CE
CE
CB
CE
CE
= 10 uA, I
= 100 uA, I
= 10 mA, I
= 40 V, I
= 5 V, I
= 10V, I
= 10 V, I
= 5 V, I
= 0.2V, I
B
Test Condition
R34
1
C
C
C
C
E
E
E
C
= 5 mA
= 100uA
B
= 5 mA
= 0
B
= 0
= 0, f = 1.0 MHz
= 5mA
= 0.5 mA
= 0
E
-55~150
Value
100
150
200
50
50
10
Eqivalent Circuit
MIN
0.09
0.5
3.2
50
50
68
Typ
250
3.7
4.7
0.1
MAX
0.11
November 2006
0.1
0.3
1.3
6.2
Units
www.fairchildsemi.com
mW
mA
°C
°C
V
V
V
Units
MHz
KΩ
uA
pF
V
V
V
V
V
tm
Related parts for FJV3114RMTF
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FJV3114RMTF Summary of contents
Page 1
... Output Capacitance cb V Input Off Voltage off Input On Voltage on Input Resistor Resistor Ratio Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation FJV3114R Rev R34 SOT- 25°C unless otherwise noted a Parameter , by R θ 25°C unless otherwise noted C Test Condition uA ...
Page 2
Typical Performance Characteristics Figure 1. DC current Gain 1000 100 [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 1000 100 [mA], COLLECTOR CURRENT C FJV3114R Rev. B Figure 2. Input ...
Page 3
Package Dimensions ±0.03 0.40 0.95 FJV3114R Rev. B SOT-23 ±0.03 0.40 0.96~1.14 2.90 ±0.10 ±0.03 0.95 ±0.03 ±0.03 1.90 0.508REF 3 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...