FJY4002R Fairchild Semiconductor, FJY4002R Datasheet
FJY4002R
Manufacturer Part Number
FJY4002R
Description
TRANS PNP 50V 100MA SOT-523F
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJY4002R.pdf
(4 pages)
Specifications of FJY4002R
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-89-3, SOT-523F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FJY4002RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FJY4002R
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
FJY4002R
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
FJY4002R Rev. B
FJY4002R
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
• Complement to FJY3002R
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics*
* Minimum land pad size.
Electrical Characteristics*
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
V
V
I
T
T
P
R
V
V
I
h
V
f
C
V
V
R
R
C
CBO
T
STG
J
FE
CBO
CEO
EBO
C
(BR)CBO
(BR)CEO
CE(
I(
I(
Symbol
Symbol
θJA
Symbol
cb
1
1
off
on)
/R
sat
)
2
)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature Range
Junction Temperature
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
C
Capacitance
SOT - 523F
1
=10KΩ, R
Parameter
B
2
Parameter
Parameter
=10KΩ)
E
T
a
, by R
=25°C unless otherwise noted
T
C
= 25°C unless otherwise noted
θJA
T
a
= 25°C unless otherwise noted
I
I
V
V
I
V
V
V
V
C
C
C
CB
CE
CE
CB
CE
CE
= -10 uA, I
= -100 uA, I
= -10 mA, I
B
= -40 V, I
= -5 V, I
= -10V, I
= -10 V, I
= -5 V, I
= -0.3V, I
S52
Test Condition
C
1
C
C
C
E
E
E
C
= -5mA
B
= -100uA
= -5 mA
B
= 0
E
= 0
= 0, f = 1.0 MHz
= -10mA
= -0.5 mA
= 0
-55~150
Equivalent Circuit
Value
Max
-100
150
200
600
-50
-50
-10
MIN
-0.5
-50
-50
0.9
30
7
Typ
200
5.5
1.0
10
MAX
-0.1
-0.3
1.1
13
-3
July 2007
Units
Units
www.fairchildsemi.com
°C/W
mW
mA
°C
°C
V
V
V
Units
MHz
KΩ
uA
pF
V
V
V
V
V
tm
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FJY4002R Summary of contents
Page 1
... V Input Off Voltage off Input On Voltage on Input Resistor Resistor Ratio Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation FJY4002R Rev. B =10KΩ S52 25°C unless otherwise noted a Parameter , by R θJA T =25°C unless otherwise noted a Parameter T = 25°C unless otherwise noted ...
Page 2
... Typical Performance Characteristics Figure 1. DC current Gain 1000 100 10 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Input off Voltage -1000 -100 -10 -0.0 -0.4 -0.8 -1.2 V (off)[V], INPUT OFF VOLTAGE I FJY4002R Rev. B Figure 2. Input On Voltage -100 -10 -1 -0.1 -100 -1000 -0.1 Figure 4. Power Derating 280 V ...
Page 3
... Package Dimensions FJY4002R Rev. B SOT-523F 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...