MMUN2115LT1G ON Semiconductor, MMUN2115LT1G Datasheet - Page 11
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MMUN2115LT1G
Manufacturer Part Number
MMUN2115LT1G
Description
TRANS BRT PNP 50V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMUN2111LT3G.pdf
(13 pages)
Specifications of MMUN2115LT1G
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
10kohm
Rf Transistor Case
SOT-23
No. Of Pins
3
Continuous Collector Current Max
100mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMUN2115LT1G
Manufacturer:
ON Semiconductor
Quantity:
25 836
Company:
Part Number:
MMUN2115LT1G
Manufacturer:
ON Semiconductor
Quantity:
4 800
Company:
Part Number:
MMUN2115LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2115LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
I
C
5
/I
B
V
= 10
R
10
Figure 34. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 32. V
, COLLECTOR CURRENT (mA)
15
−25°C
20
20
25
0.1
CE(sat)
25°C
10
1
TYPICAL ELECTRICAL CHARACTERISTICS
0
Figure 36. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= −25°C
75°C
35
10
f = 1 MHz
l
T
I
E
C
A
40
= 0 V
, COLLECTOR CURRENT (mA)
= 25°C
C
25°C
40
http://onsemi.com
45
MMUN2132LT1
20
50
50
11
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 35. Output Current versus Input Voltage
T
A
75°C
V
1
O
= −25°C
= 0.2 V
40
2
T
I
Figure 33. DC Current Gain
A
C
V
, COLLECTOR CURRENT (mA)
in
= −25°C
25°C
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
6
25°C
V
7
O
= 5 V
8
V
CE
= 10 V
9
100
10