MMUN2133LT1G ON Semiconductor, MMUN2133LT1G Datasheet - Page 3

• Manufacturer Part Number: MMUN2133LT1G
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2133LT1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• Rf Transistor Case: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
(V
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.25 V, R
= 0.050 V, R
Characteristic
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted) (Continued)
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3
Symbol
V
CE(sat)
V
V
h
FE
OH
OL
Min
160
160
3.0
8.0
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
35
60
80
80
15
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
140
250
250
140
130
5.0
60
15
27
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Vdc
Vdc
Vdc