MMUN2215LT1G ON Semiconductor, MMUN2215LT1G Datasheet - Page 14

• Manufacturer Part Number: MMUN2215LT1G
• Description: TRANS BRT NPN 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2215LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Rf Transistor Case: SOT-23
• No. Of Pins: 3
• Dc Current Gain Min (hfe): 160
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Product Bulletin #16134
SZMMBZ27VCLT1
SZMMBZ27VCLT1G
SZMMBZ33VALT1
SZMMBZ33VALT1G
SZMMBZ33VALT3G
SZMMBZ5229BLT1
SZMMBZ5229BLT1G
SZMMBZ5241BLT1
SZMMBZ5242BLT1
SZMMBZ5245BLT1G
SZMMBZ5259BLT1G
SZMMBZ5261BLT1
SZMMBZ5V6ALT1
SZMMBZ6V2ALT1
Issue Date: 11 Jul 2008
Rev.07-02-06
Page 14 of 14