MUN2215T1G ON Semiconductor, MUN2215T1G Datasheet - Page 8

• Manufacturer Part Number: MUN2215T1G
• Description: TRANS BRT NPN 100MA 50V SC-59
• Manufacturer: ON Semiconductor

Specifications of MUN2215T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 338mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Rf Transistor Case: SC-59
• No. Of Pins: 3
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
0.8
0.6
0.2
10
0.4
1
1
0
0
0
I
C
/I
B
= 10
10
Figure 14. Output Capacitance
Figure 12. V
V
20
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1
CE(sat)
40
100
0.1
10
25°C
1
T
0
Figure 16. Input Voltage versus Output Current
A
30
versus I
= -25°C
V
O
= 0.2 V
60
75°C
10
C
f = 1 MHz
I
T
40
E
A
= 0 V
I
= 25°C
MUN2211T1 Series
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
80
50
8
0.001
1000
T
30
0.01
100
A
100
0.1
10
10
= -25°C
1
1
0
Figure 15. Output Current versus Input Voltage
40
75°C
25°C
75°C
Figure 13. DC Current Gain
2
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (VOLTS)
50
25°C
4
10
T
A
V
= -25°C
6
O
= 5 V
V
T
A
CE
8
= 75°C
= 10 V
25°C
-25°C
100
10