MUN5133T1G ON Semiconductor, MUN5133T1G Datasheet - Page 9

• Manufacturer Part Number: MUN5133T1G
• Description: TRANS BRT PNP 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5133T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10
0.01
9
8
7
6
5
4
3
2
1
0
0.1
0
1
0
Figure 23. Maximum Collector Voltage versus
V
10
5
R
Figure 25. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
10
20
Collector Current
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
15
30
0.1
10
1
0
Figure 27. Input Voltage versus Output Current
−25°C
20
25°C
40
5
75°C
25
10
−25°C
75°C
I
50
C
, OUTPUT CURRENT (mA)
15
http://onsemi.com
30
25°C
20
60
35
9
25
1000
0.01
100
30
100
0.1
10
10
1
1
0
0
Figure 26. Output Current versus Input Voltage
35
75°C
1
40
20
2
Figure 24. DC Current Gain
I
45
C
V
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
3
−25°C
40
50
4
60
5
6
25°C
80
7
−25°C
75°C
8
100
9
120
10